Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevLett.104.137201
Title: Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO
Authors: Yi, J.B. 
Lim, C.C.
Xing, G.Z.
Fan, H.M. 
Van, L.H. 
Huang, S.L.
Yang, K.S.
Huang, X.L.
Qin, X.B.
Wang, B.Y.
Wu, T.
Wang, L.
Zhang, H.T. 
Gao, X.Y. 
Liu, T. 
Wee, A.T.S. 
Feng, Y.P. 
Ding, J. 
Issue Date: 29-Mar-2010
Citation: Yi, J.B., Lim, C.C., Xing, G.Z., Fan, H.M., Van, L.H., Huang, S.L., Yang, K.S., Huang, X.L., Qin, X.B., Wang, B.Y., Wu, T., Wang, L., Zhang, H.T., Gao, X.Y., Liu, T., Wee, A.T.S., Feng, Y.P., Ding, J. (2010-03-29). Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO. Physical Review Letters 104 (13) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevLett.104.137201
Abstract: We demonstrate, both theoretically and experimentally, that cation vacancy can be the origin of ferromagnetism in intrinsic dilute magnetic semiconductors. The vacancies can be controlled to tune the ferromagnetism. Using Li-doped ZnO as an example, we found that while Li itself is nonmagnetic, it generates holes in ZnO, and its presence reduces the formation energy of Zn vacancy, and thereby stabilizes the zinc vacancy. Room temperature ferromagnetism with p type conduction was observed in pulsed laser deposited ZnO:Li films with certain doping concentration and oxygen partial pressure. © 2010 The American Physical Society.
Source Title: Physical Review Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/64881
ISSN: 00319007
DOI: 10.1103/PhysRevLett.104.137201
Appears in Collections:Staff Publications

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