Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3021142
Title: Ferromagnetic Cu doped ZnO as an electron injector in heterojunction light emitting diodes
Authors: Herng, T.S.
Lau, S.P.
Yu, S.F.
Tsang, S.H.
Teng, K.S.
Chen, J.S. 
Issue Date: 2008
Source: Herng, T.S., Lau, S.P., Yu, S.F., Tsang, S.H., Teng, K.S., Chen, J.S. (2008). Ferromagnetic Cu doped ZnO as an electron injector in heterojunction light emitting diodes. Journal of Applied Physics 104 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3021142
Abstract: Ferromagnetic and highly conductive copper doped ZnO (ZnO:Cu) films were prepared by filtered cathodic vacuum arc technique. By employing a biasing technique during growth, the electron concentration and resistivity of the ZnO:Cu films can be as high as 1020 cm-3 and 5.2× 10-3 cm, respectively. The ferromagnetic behavior is observed in all the conductive films, but its magnetization is quenched with an increment in carrier concentration, suggesting that carrier induced exchange is not directly responsible for the ferromagnetism. Heterojunction light emitting diodes have been fabricated using the conductive ZnO:Cu layer as an electron injector and a p -type GaN as hole injector. Electroluminescence can be detected from the devices. © 2008 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/64880
ISSN: 00218979
DOI: 10.1063/1.3021142
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

30
checked on Dec 6, 2017

WEB OF SCIENCETM
Citations

29
checked on Nov 22, 2017

Page view(s)

25
checked on Dec 10, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.