Please use this identifier to cite or link to this item:
https://doi.org/10.1149/1.3431038
DC Field | Value | |
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dc.title | Electrochemical anodization of silicon-on-insulator wafers using an AC | |
dc.contributor.author | Breese, M.B.H. | |
dc.contributor.author | Azimi, S. | |
dc.contributor.author | Ow, Y.S. | |
dc.contributor.author | Mangaiyarkarasi, D. | |
dc.contributor.author | Chan, T.K. | |
dc.contributor.author | Jiao, S. | |
dc.contributor.author | Dang, Z.Y. | |
dc.contributor.author | Blackwood, D.J. | |
dc.date.accessioned | 2014-06-17T07:58:20Z | |
dc.date.available | 2014-06-17T07:58:20Z | |
dc.date.issued | 2010 | |
dc.identifier.citation | Breese, M.B.H., Azimi, S., Ow, Y.S., Mangaiyarkarasi, D., Chan, T.K., Jiao, S., Dang, Z.Y., Blackwood, D.J. (2010). Electrochemical anodization of silicon-on-insulator wafers using an AC. Electrochemical and Solid-State Letters 13 (8) : H271-H273. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3431038 | |
dc.identifier.issn | 10990062 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/64860 | |
dc.description.abstract | Electrochemical anodization of bulk silicon has applications in many micromachining processes. However, its use for silicon photonics is limited because silicon-on-insulator (SOI) wafers cannot be anodized using a conventional process because of the buried oxide. We overcome this using an alternating potential to induce an ac across an SOI wafer, treating it as a capacitative structure. The resultant surface roughness is comparable to that obtained using conventional anodization, and uniform etching across a 6 mm exposed surface is obtained with a minimum patterned linewidth of 2.5 μm in the device layer. © 2010 The Electrochemical Society. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.3431038 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.contributor.department | MATERIALS SCIENCE AND ENGINEERING | |
dc.description.doi | 10.1149/1.3431038 | |
dc.description.sourcetitle | Electrochemical and Solid-State Letters | |
dc.description.volume | 13 | |
dc.description.issue | 8 | |
dc.description.page | H271-H273 | |
dc.description.coden | ESLEF | |
dc.identifier.isiut | 000278694500025 | |
Appears in Collections: | Staff Publications |
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