Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.2990853
Title: Effects of oxygen on low-temperature growth and band alignment of ZnO/GaN heterostructures
Authors: Liu, H.F.
Hu, G.X. 
Gong, H. 
Zang, K.Y.
Chua, S.J.
Issue Date: 2008
Source: Liu, H.F., Hu, G.X., Gong, H., Zang, K.Y., Chua, S.J. (2008). Effects of oxygen on low-temperature growth and band alignment of ZnO/GaN heterostructures. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 26 (6) : 1462-1468. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2990853
Abstract: Continuous ZnO thin films have been grown at low temperature (400 °C) on GaNc -sapphire substrates in a radio-frequency magnetron-sputtering chamber employing a substoichiometric ZnO target with and without extra oxygen feeding. The effects of oxygen on the growth and band alignment of the ZnOGaN heterostructures were investigated by using scanning-electron microscopy, x-ray diffraction, photoluminescence and transmittance/absorbance, ultraviolet-resonant Raman scattering, and x-ray photoelectron spectroscopy. Very remarkable changes of the structural and optical properties resulted from the introduction of oxygen: the surface hexahedral facets were diminished; the size of the surface islands and, hence, the compressive strains were reduced; ultraviolet transparency of the ZnO film was enhanced, together with an increased band gap due to the reduced intrinsic shallow-donor defects; and hence, the free-electron concentration. The offset in valence bands of the ZnOGaN heterostructure was increased by ∼90 meV at certain conditions. This is likely due to the increased Ga-O bonds at the ZnOGaN interface by the incorporation of extra oxygen at the initial growth of ZnO. © 2008 American Vacuum Society.
Source Title: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
URI: http://scholarbank.nus.edu.sg/handle/10635/64857
ISSN: 07342101
DOI: 10.1116/1.2990853
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