Please use this identifier to cite or link to this item:
|Title:||Effects of oxygen on low-temperature growth and band alignment of ZnO/GaN heterostructures|
|Source:||Liu, H.F., Hu, G.X., Gong, H., Zang, K.Y., Chua, S.J. (2008). Effects of oxygen on low-temperature growth and band alignment of ZnO/GaN heterostructures. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 26 (6) : 1462-1468. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2990853|
|Abstract:||Continuous ZnO thin films have been grown at low temperature (400 °C) on GaNc -sapphire substrates in a radio-frequency magnetron-sputtering chamber employing a substoichiometric ZnO target with and without extra oxygen feeding. The effects of oxygen on the growth and band alignment of the ZnOGaN heterostructures were investigated by using scanning-electron microscopy, x-ray diffraction, photoluminescence and transmittance/absorbance, ultraviolet-resonant Raman scattering, and x-ray photoelectron spectroscopy. Very remarkable changes of the structural and optical properties resulted from the introduction of oxygen: the surface hexahedral facets were diminished; the size of the surface islands and, hence, the compressive strains were reduced; ultraviolet transparency of the ZnO film was enhanced, together with an increased band gap due to the reduced intrinsic shallow-donor defects; and hence, the free-electron concentration. The offset in valence bands of the ZnOGaN heterostructure was increased by ∼90 meV at certain conditions. This is likely due to the increased Ga-O bonds at the ZnOGaN interface by the incorporation of extra oxygen at the initial growth of ZnO. © 2008 American Vacuum Society.|
|Source Title:||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 7, 2017
WEB OF SCIENCETM
checked on Nov 29, 2017
checked on Dec 11, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.