Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4704686
Title: Conductivity mechanism of nanosized silver layer embedded in indium zinc oxide
Authors: Sun, J.
Lai, W.S.
Gong, H. 
Issue Date: 15-Apr-2012
Source: Sun, J., Lai, W.S., Gong, H. (2012-04-15). Conductivity mechanism of nanosized silver layer embedded in indium zinc oxide. Journal of Applied Physics 111 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4704686
Abstract: Silver (Ag) embedding in indium zinc oxide (IZO) leads to abnormal conductivity behavior for IZO-Ag-IZO (IAI) system. When Ag layer is thinner than a critical Ag thickness, the IAI sample shows semiconductor behavior, and its resistivity is unexpectedly higher than that of IZO but decreases with an increase in Ag thickness. After surpassing the critical thickness, metallic conduction characteristics appear and the resistivity is lower than IZO and decreases with further increasing Ag thickness. A conduction model/formula is proposed, by which experimental data are well fitted. Haacke figure of merit can be 3 times higher than that of IZO. © 2012 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/64831
ISSN: 00218979
DOI: 10.1063/1.4704686
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