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|Title:||Conditions for a carrier multiplication in amorphous-selenium based photodetector|
|Citation:||Masuzawa, T., Kuniyoshi, S., Onishi, M., Kato, R., Saito, I., Yamada, T., Koh, A.T.T., Chua, D.H.C., Shimosawa, T., Okano, K. (2013-02-18). Conditions for a carrier multiplication in amorphous-selenium based photodetector. Applied Physics Letters 102 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4793487|
|Abstract:||Amorphous selenium is a promising candidate for high sensitivity photodetector due to its unique carrier multiplication phenomenon. More than 10 carriers can be generated per incident photon, which leads to high photo-conversion efficiency of 1000% that allows real-time imaging in dark ambient. However, application of this effect has been limited to specific devices due to the lack in material characterization. In this article, mechanism of carrier multiplication has been clarified using time-of-flight secondary ion mass spectroscopy and Raman spectroscopy. A prototype photodetector achieved photo conversion efficiency of 4000%, which explains the signal enhancement mechanism in a-Se based photodetector. © 2013 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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