Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2917901
Title: Understanding of boron junction stability in preamorphized silicon after optimized flash annealing
Authors: Yeong, S.H.
Colombeau, B.
Poon, C.H.
Mok, K.R.C.
See, A.
Benistant, F.
Tan, D.X.M.
Pey, K.L.
Ng, C.M.
Chan, L.
Srinivasan, M.P. 
Issue Date: 2008
Source: Yeong, S.H., Colombeau, B., Poon, C.H., Mok, K.R.C., See, A., Benistant, F., Tan, D.X.M., Pey, K.L., Ng, C.M., Chan, L., Srinivasan, M.P. (2008). Understanding of boron junction stability in preamorphized silicon after optimized flash annealing. Journal of the Electrochemical Society 155 (7) : H508-H512. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2917901
Abstract: Recent research in ultrashallow junction formation has been greatly focused on the development of various advanced annealing techniques. Flash annealing has become one of the most likely candidates to achieve the stringent junction requirements for the forthcoming generation of complementary metal oxide semiconductor devices. In this paper, we present an extensive study on the stability of highly active and ultrashallow B junction in preamorphized silicon formed by optimized flash annealing. Our results demonstrate a strong improvement in junction stability by using the multiple-pulse and pre-spike rapid thermal anneal flash annealing schemes. The deactivation of the flash-annealed junction is clearly shown to be correlated to the different levels of self-interstitial supersaturation, resulting from the release of excess silicon interstitials from the end-of-range defects. We show that optimized multipulse flash annealing could minimize the interaction between point defects and dopant atoms, enabling improvement in junction properties. © 2008 The Electrochemical Society.
Source Title: Journal of the Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/64768
ISSN: 00134651
DOI: 10.1149/1.2917901
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

1
checked on Dec 5, 2017

Page view(s)

23
checked on Dec 18, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.