Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2912009
Title: The impact of boron halo on phosphorus junction formation and stability
Authors: Yeong, S.H.
Colombeau, B.
Mok, K.R.C.
Benistant, F.
Chan, L.
Srinivasan, M.P. 
Issue Date: 2008
Source: Yeong, S.H., Colombeau, B., Mok, K.R.C., Benistant, F., Chan, L., Srinivasan, M.P. (2008). The impact of boron halo on phosphorus junction formation and stability. Electrochemical and Solid-State Letters 11 (7) : H179-H181. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2912009
Abstract: In this paper we study the diffusion and activation behaviors of ultrashallow and high concentration of phosphorus (P) dopants in silicon processed with low-temperature thermal annealing. For the first time, significant improvement in dopant activation is observed when a boron halo implant is incorporated in the germanium preamorphized P junction. Our results are discussed in terms of the interactions between dopants and the point defects upon annealing. In addition, no rapid deactivation behavior is observed for the P-doped junction during the isochronal annealing cycle. © 2008 The Electrochemical Society.
Source Title: Electrochemical and Solid-State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/64708
ISSN: 10990062
DOI: 10.1149/1.2912009
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