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|Title:||Surface modification of SiLK® by graft copolymerization with 4-vinylpyridine for reduction in copper diffusion|
|Citation:||Zhu, Y.Q., Kang, E.T., Neoh, K.G., Chan, L., Lai, D.M.Y., Huan, A.C.H. (2004-03-30). Surface modification of SiLK® by graft copolymerization with 4-vinylpyridine for reduction in copper diffusion. Applied Surface Science 225 (1-4) : 144-155. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2003.09.046|
|Abstract:||Surface modification of Ar plasma-pretreated SiLK® film coating on (100)-oriented single crystal silicon wafer (the SiLK-Si substrate) via UV-induced graft copolymerization with 4-vinylpyridine (the P4VP-g-SiLK-Si surface) was carried out to enhance the adhesion of the vacuum deposited copper. The composition and morphology of the P4VP-g-SiLK-Si surface were characterized by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), respectively. The 180°-peel adhesion strength of the copper film with the P4VP-g-SiLK-Si surface was about 2.5N/cm. This adhesion strength was much higher than that of the copper film with the pristine or the Ar plasma-treated SiLK-Si surface. The strong adhesion of evaporated copper with the P4VP-g-SiLK-Si surface was attributed to the strong interaction of the copper atoms with the pyridine groups. The extent of copper diffusion into the P4VP-g-SiLK-Si film at the annealing temperature of 300°C, was investigated by time-of-flight secondary ion mass spectroscopy (ToF-SIMS) and compared to those of copper diffusion into the pristine and Ar plasma-treated SiLK-Si surfaces. The improved resistance of the P4VP-g-SiLK-Si surface to copper diffusion, probably arose from the strong interaction of the copper atoms with the grafted 4VP polymer. © 2003 Elsevier B.V. All rights reserved.|
|Source Title:||Applied Surface Science|
|Appears in Collections:||Staff Publications|
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