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Title: Dangling-bond logic gates on a Si(100)-(2×1)-H surface
Authors: Kawai, H.
Ample, F.
Wang, Q.
Yeo, Y.K.
Saeys, M. 
Joachim, C.
Issue Date: 7-Mar-2012
Citation: Kawai, H., Ample, F., Wang, Q., Yeo, Y.K., Saeys, M., Joachim, C. (2012-03-07). Dangling-bond logic gates on a Si(100)-(2×1)-H surface. Journal of Physics Condensed Matter 24 (9) : -. ScholarBank@NUS Repository.
Abstract: Atomic-scale Boolean logic gates (LGs) with two inputs and one output (i.e.OR, NOR, AND, NAND) were designed on a Si(100)-(2×1)H surface and connected to the macroscopic scale by metallic nano-pads physisorbed on the Si(100)-(2×1)H surface. The logic inputs are provided by saturating and unsaturating two surface Si dangling bonds, which can, for example, be achieved by adding and extracting two hydrogen atoms per input. Quantum circuit design rules together with semi-empirical elastic-scattering quantum chemistry transport calculations were used to determine the output current intensity of the proposed switches and LGs when they are interconnected to the metallic nano-pads by surface atomic-scale wires. Our calculations demonstrate that the proposed devices can reach ON/OFF ratios of up to 2000 for a running current in the 10νA range. © 2012 IOP Publishing Ltd.
Source Title: Journal of Physics Condensed Matter
ISSN: 09538984
DOI: 10.1088/0953-8984/24/9/095011
Appears in Collections:Staff Publications

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