Please use this identifier to cite or link to this item: https://doi.org/9/095011
Title: Dangling-bond logic gates on a Si(100)-(2×1)-H surface
Authors: Kawai, H.
Ample, F.
Wang, Q.
Yeo, Y.K.
Saeys, M. 
Joachim, C.
Issue Date: 7-Mar-2012
Source: Kawai, H.,Ample, F.,Wang, Q.,Yeo, Y.K.,Saeys, M.,Joachim, C. (2012-03-07). Dangling-bond logic gates on a Si(100)-(2×1)-H surface. Journal of Physics Condensed Matter 24 (9) : -. ScholarBank@NUS Repository. https://doi.org/9/095011
Abstract: Atomic-scale Boolean logic gates (LGs) with two inputs and one output (i.e.OR, NOR, AND, NAND) were designed on a Si(100)-(2×1)H surface and connected to the macroscopic scale by metallic nano-pads physisorbed on the Si(100)-(2×1)H surface. The logic inputs are provided by saturating and unsaturating two surface Si dangling bonds, which can, for example, be achieved by adding and extracting two hydrogen atoms per input. Quantum circuit design rules together with semi-empirical elastic-scattering quantum chemistry transport calculations were used to determine the output current intensity of the proposed switches and LGs when they are interconnected to the metallic nano-pads by surface atomic-scale wires. Our calculations demonstrate that the proposed devices can reach ON/OFF ratios of up to 2000 for a running current in the 10νA range. © 2012 IOP Publishing Ltd.
Source Title: Journal of Physics Condensed Matter
URI: http://scholarbank.nus.edu.sg/handle/10635/63682
ISSN: 09538984
DOI: 9/095011
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

31
checked on Dec 8, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.