Please use this identifier to cite or link to this item: https://doi.org/10.1021/nn404254y
Title: Contacting a conjugated molecule with a surface dangling bond dimer on a hydrogenated Ge(001) surface allows imaging of the hidden ground electronic state
Authors: Godlewski, S.
Kolmer, M.
Kawai, H.
Such, B.
Zuzak, R.
Saeys, M. 
De Mendoza, P.
Echavarren, A.M.
Joachim, C.
Szymonski, M.
Keywords: atomic-scale contacts
hydrogenated semiconductor
molecule manipulation
organic molecule
scanning tunneling microscope
single-molecule devices
surface dangling bonds
Issue Date: 26-Nov-2013
Source: Godlewski, S., Kolmer, M., Kawai, H., Such, B., Zuzak, R., Saeys, M., De Mendoza, P., Echavarren, A.M., Joachim, C., Szymonski, M. (2013-11-26). Contacting a conjugated molecule with a surface dangling bond dimer on a hydrogenated Ge(001) surface allows imaging of the hidden ground electronic state. ACS Nano 7 (11) : 10105-10111. ScholarBank@NUS Repository. https://doi.org/10.1021/nn404254y
Abstract: Fabrication of single-molecule logic devices requires controlled manipulation of molecular states with atomic-scale precision. Tuning molecule-substrate coupling is achieved here by the reversible attachment of a prototypical planar conjugated organic molecule to dangling bonds on the surface of a hydrogenated semiconductor. We show that the ground electronic state resonance of a Y-shaped polyaromatic molecule physisorbed on a defect-free area of a fully hydrogenated surface cannot be observed by scanning tunneling microscopy (STM) measurements because it is decoupled from the Ge bulk states by the hydrogen-passivated surface. The state can be accessed by STM only if the molecule is contacted with the substrate by a dangling bond dimer. The reversibility of the attachment processes will be advantageous in the construction of surface atomic-scale circuits composed of single-molecule devices interconnected by the surface dangling bond wires. © 2013 American Chemical Society.
Source Title: ACS Nano
URI: http://scholarbank.nus.edu.sg/handle/10635/63651
ISSN: 19360851
DOI: 10.1021/nn404254y
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