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Title: Comprehensive model of damage accumulation in silicon
Authors: Mok, K.R.C.
Benistant, F.
Jaraiz, M.
Rubio, J.E.
Castrillo, P.
Pinacho, R.
Srinivasan, M.P. 
Issue Date: 2008
Citation: Mok, K.R.C., Benistant, F., Jaraiz, M., Rubio, J.E., Castrillo, P., Pinacho, R., Srinivasan, M.P. (2008). Comprehensive model of damage accumulation in silicon. Journal of Applied Physics 103 (1) : -. ScholarBank@NUS Repository.
Abstract: Ion implantation induced damage accumulation is crucial to the simulation of silicon processing. We present a physically based damage accumulation model, implemented in a nonlattice atomistic kinetic Monte Carlo simulator, that can simulate a diverse range of interesting experimental observations. The model is able to reproduce the ion-mass dependent silicon amorphous-crystalline transition temperature of a range of ions from C to Xe, the amorphous layer thickness for a range of amorphizing implants, the superlinear increase in damage accumulation with dose, and the two-layered damage distribution observed along the path of a high-energy ion. In addition, this model is able to distinguish between dynamic annealing and post-cryogenic implantation annealing, whereby dynamic annealing is more effective in removing damage than post-cryogenic implantation annealing at the same temperature. © 2008 American Institute of Physics.
Source Title: Journal of Applied Physics
ISSN: 00218979
DOI: 10.1063/1.2829815
Appears in Collections:Staff Publications

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