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|Title:||Velocity-field characteristics of selectively doped GaAs/AlxGa1-xAs quantum-well heterostructures|
|Authors:||Tan, L.S. |
|Citation:||Tan, L.S., Chua, S.J., Arora, V.K. (1993). Velocity-field characteristics of selectively doped GaAs/AlxGa1-xAs quantum-well heterostructures. Physical Review B 47 (20) : 13868-13871. ScholarBank@NUS Repository.|
|Abstract:||Recent experimental observations indicating poor correlation between the saturation velocity and Ohmic mobility lead us to propose a theory for a velocity-limiting mechanism in quantum-well heterostructures. The theory is based on the distribution function which takes into account the electron-drift anisotropy introduced by the high electric field for a degenerately doped quantum well. The drift velocity is shown to be limited by the Fermi velocity; a result which indicates that the saturation velocity is independent of the low-field mobility which is strongly controlled by momentum-randomizing scattering events. The dominance of optical-phonon emission at high electric field lowers the saturation velocity below the Fermi velocity. Excellent agreement is obtained between the theoretical and experimental results on the velocity-field characteristics of GaAs/AlxGa1-xAs quantum-well heterostructures. © 1993 The American Physical Society.|
|Source Title:||Physical Review B|
|Appears in Collections:||Staff Publications|
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