Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/62920
DC FieldValue
dc.titleVariable axis lens of mixed electrostatic and magnetic fields and its application in electron-beam lithography systems
dc.contributor.authorZhao, Y.
dc.contributor.authorKhursheed, A.
dc.date.accessioned2014-06-17T06:56:21Z
dc.date.available2014-06-17T06:56:21Z
dc.date.issued1999
dc.identifier.citationZhao, Y.,Khursheed, A. (1999). Variable axis lens of mixed electrostatic and magnetic fields and its application in electron-beam lithography systems. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 17 (6) : 2795-2796. ScholarBank@NUS Repository.
dc.identifier.issn10711023
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62920
dc.description.abstractExisting variable axis lens (VAL) concepts are based upon the power series expansion of the lens field, which theoretically limits them to situations where the focusing and in-lens deflection fields are of the same type, usually magnetic. In this article, a general VAL condition is derived from the paraxial trajectory equation that is applicable to any combined focusing and in-lens deflection system with mixed magnetic and electrostatic fields. Two basic configurations of mixed-field VALs are predicated. The feasibility of a magnetic VAL using in-lens electrostatic deflectors for e-beam lithography applications is analyzed. Deflection aberration simulations show that this mixed-field VAL is comparable to its pure-field counterpart. © 1999 American Vacuum Society.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
dc.description.volume17
dc.description.issue6
dc.description.page2795-2796
dc.description.codenJVTBD
dc.identifier.isiutNOT_IN_WOS
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