Please use this identifier to cite or link to this item:
Title: Two-electron state and negative-U property of sulfur DX centers in GaAs1-xPx
Authors: Li, M.F. 
Luo, Y.Y.
Yu, P.Y.
Weber, E.R.
Fujioka, H.
Du, A.Y.
Chua, S.J. 
Lim, Y.T.
Issue Date: 1994
Citation: Li, M.F., Luo, Y.Y., Yu, P.Y., Weber, E.R., Fujioka, H., Du, A.Y., Chua, S.J., Lim, Y.T. (1994). Two-electron state and negative-U property of sulfur DX centers in GaAs1-xPx. Physical Review B 50 (11) : 7996-7999. ScholarBank@NUS Repository.
Abstract: A new way to study the two-electron state in DX centers at atmospheric pressure is reported. It is based on the idea of codoping a GaAs0.6P0.4 sample with a uniform background of Te shallow donors (as source of free carriers) and a Gaussian distribution of sulfur DX centers by ion implantation. Using both capacitance-voltage profiling and deep-level transient spectroscopy measurements, we demonstrate that the ground state of the sulfur DX center traps two electrons and therefore has negative U. © 1994 The American Physical Society.
Source Title: Physical Review B
ISSN: 01631829
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on May 27, 2018


checked on May 30, 2018

Page view(s)

checked on Jun 29, 2018

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.