Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.50.7996
Title: Two-electron state and negative-U property of sulfur DX centers in GaAs1-xPx
Authors: Li, M.F. 
Luo, Y.Y.
Yu, P.Y.
Weber, E.R.
Fujioka, H.
Du, A.Y.
Chua, S.J. 
Lim, Y.T.
Issue Date: 1994
Source: Li, M.F., Luo, Y.Y., Yu, P.Y., Weber, E.R., Fujioka, H., Du, A.Y., Chua, S.J., Lim, Y.T. (1994). Two-electron state and negative-U property of sulfur DX centers in GaAs1-xPx. Physical Review B 50 (11) : 7996-7999. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.50.7996
Abstract: A new way to study the two-electron state in DX centers at atmospheric pressure is reported. It is based on the idea of codoping a GaAs0.6P0.4 sample with a uniform background of Te shallow donors (as source of free carriers) and a Gaussian distribution of sulfur DX centers by ion implantation. Using both capacitance-voltage profiling and deep-level transient spectroscopy measurements, we demonstrate that the ground state of the sulfur DX center traps two electrons and therefore has negative U. © 1994 The American Physical Society.
Source Title: Physical Review B
URI: http://scholarbank.nus.edu.sg/handle/10635/62904
ISSN: 01631829
DOI: 10.1103/PhysRevB.50.7996
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