The relationship between the static and dynamic properties of optically switched injection-locked bistable semiconductor lasers

Abstract

The relationship between the static and dynamic properties of optically switched injection-locked semiconductor lasers biased below and above threshold is presented. Simulations show that dynamic properties can be predicted to a certain extent from the static properties. It is shown that as a "rule of thumb" switching is achieved when the operating point, defined by the bias current, injection power and frequency detuning, lies outside static bistable loop.