Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/62860
Title: The excimer laser-induced ripple structures at the interfaces of silicon-dioxide/silicon substrates
Authors: Lu, Y.F. 
Yu, J.J.
Choi, W.K. 
Keywords: Far-ultraviolet radiation
Interface
Interface structure and roughness
Laser surface modification
Microstructure
Silicon-dioxide film
Silicon-dioxide/silicon system
Issue Date: Jun-1998
Source: Lu, Y.F.,Yu, J.J.,Choi, W.K. (1998-06). The excimer laser-induced ripple structures at the interfaces of silicon-dioxide/silicon substrates. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 37 (6 A) : 3471-3474. ScholarBank@NUS Repository.
Abstract: Excimer laser-induced surface structures at the interfaces of silicon dioxide/silicon have been investigated experimentally. It is found that a stable, fine and homogeneous ripple structure is preferentially generated under a comparatively larger laser beam. The ripple periodicity seems to have no angular dependence and is enhanced with the increased laser pulses for the first a few pulses. The initial substrate temperature also represents an important parameter which can be used to control the interface ripple structures. The threshold pulse number for the ripple formation at different laser fluence, or at different oxide thickness is studied as well. This study will be helpful in understanding the physics of laser-induced ripple formation, and hence be useful in controlling the ripple structures within the range required for the laser texturing of the high density magnetic recording media.
Source Title: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URI: http://scholarbank.nus.edu.sg/handle/10635/62860
ISSN: 00214922
Appears in Collections:Staff Publications

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