Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/62849
Title: Temperature dependence of the low-field mobility of a very narrow miniband in the degenerate case
Authors: Xu, S.J. 
Liu, J.
Zheng, H.Z.
Chua, S.J. 
Li, Y.X.
Cheng, W.C.
Zhang, P.H.
Yang, X.P.
Issue Date: 11-Mar-1996
Citation: Xu, S.J.,Liu, J.,Zheng, H.Z.,Chua, S.J.,Li, Y.X.,Cheng, W.C.,Zhang, P.H.,Yang, X.P. (1996-03-11). Temperature dependence of the low-field mobility of a very narrow miniband in the degenerate case. Physics Letters, Section A: General, Atomic and Solid State Physics 212 (1-2) : 97-102. ScholarBank@NUS Repository.
Abstract: Perpendicular transport in a specially designed, doped and weakly coupled GaAs/AlAs superlattice is investigated. A linear current-voltage at a bias within ± 10 mV and a negative differential velocity effect at a bias of about ± 40 mV are observed at low temperatures. The miniband conductance near zero electric field is studied as a function of temperature. It is found that the measured conductance increases slightly as the temperature increases to about 30 K, decreases as the temperature rises from 30 K to 70 K, and then increases strongly above 70 K, indicating the existence of a mobility gap.
Source Title: Physics Letters, Section A: General, Atomic and Solid State Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/62849
ISSN: 03759601
Appears in Collections:Staff Publications

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