Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/62786
DC Field | Value | |
---|---|---|
dc.title | Six-parameter DC GaAs FET model for nonlinear circuit simulation | |
dc.contributor.author | Cao, J. | |
dc.contributor.author | Lin, F. | |
dc.contributor.author | Kooi, P.S. | |
dc.contributor.author | Leong, M.S. | |
dc.date.accessioned | 2014-06-17T06:54:51Z | |
dc.date.available | 2014-06-17T06:54:51Z | |
dc.date.issued | 1997-10-09 | |
dc.identifier.citation | Cao, J.,Lin, F.,Kooi, P.S.,Leong, M.S. (1997-10-09). Six-parameter DC GaAs FET model for nonlinear circuit simulation. Electronics Letters 33 (21) : 1825-1827. ScholarBank@NUS Repository. | |
dc.identifier.issn | 00135194 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/62786 | |
dc.description.abstract | By emphasising the aspects of simplicity and accuracy for GaAs FET modelling, a six-parameter DC GaAs FET model is developed. Good agreement between simulated and measured data is obtained. | |
dc.source | Scopus | |
dc.subject | Field effect transistors | |
dc.subject | Gallium arsenide | |
dc.subject | Semiconductor device models | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.sourcetitle | Electronics Letters | |
dc.description.volume | 33 | |
dc.description.issue | 21 | |
dc.description.page | 1825-1827 | |
dc.description.coden | ELLEA | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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