Please use this identifier to cite or link to this item: https://doi.org/10.1109/16.223700
Title: Semiconductor parameters extraction using cathodoluminescence in the scanning electron microscope
Authors: Chan, Daniel S.H. 
Pey, Kin Leong 
Phang, Jacob C.H. 
Issue Date: Aug-1993
Citation: Chan, Daniel S.H., Pey, Kin Leong, Phang, Jacob C.H. (1993-08). Semiconductor parameters extraction using cathodoluminescence in the scanning electron microscope. IEEE Transactions on Electron Devices 40 (8) : 1417-1425. ScholarBank@NUS Repository. https://doi.org/10.1109/16.223700
Abstract: Five semiconductor-related parameters have been extracted simultaneously from experimental data of cathodoluminescence output collected as a function of electron-beam energy. The extraction technique is based on a recently proposed three-dimensional computer model of cathodoluminescence. It also uses a curve fitting technique based on the minimization of an area error criterion. Computational results show that a unique and unambiguous set of parameter values can be obtained for each set of the experimental data points using the algorithm suggested.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/62752
ISSN: 00189383
DOI: 10.1109/16.223700
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

9
checked on Jul 13, 2018

WEB OF SCIENCETM
Citations

8
checked on Jun 18, 2018

Page view(s)

29
checked on Jun 22, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.