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https://doi.org/10.1109/16.223700
Title: | Semiconductor parameters extraction using cathodoluminescence in the scanning electron microscope | Authors: | Chan, Daniel S.H. Pey, Kin Leong Phang, Jacob C.H. |
Issue Date: | Aug-1993 | Citation: | Chan, Daniel S.H., Pey, Kin Leong, Phang, Jacob C.H. (1993-08). Semiconductor parameters extraction using cathodoluminescence in the scanning electron microscope. IEEE Transactions on Electron Devices 40 (8) : 1417-1425. ScholarBank@NUS Repository. https://doi.org/10.1109/16.223700 | Abstract: | Five semiconductor-related parameters have been extracted simultaneously from experimental data of cathodoluminescence output collected as a function of electron-beam energy. The extraction technique is based on a recently proposed three-dimensional computer model of cathodoluminescence. It also uses a curve fitting technique based on the minimization of an area error criterion. Computational results show that a unique and unambiguous set of parameter values can be obtained for each set of the experimental data points using the algorithm suggested. | Source Title: | IEEE Transactions on Electron Devices | URI: | http://scholarbank.nus.edu.sg/handle/10635/62752 | ISSN: | 00189383 | DOI: | 10.1109/16.223700 |
Appears in Collections: | Staff Publications |
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