Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/62674
DC Field | Value | |
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dc.title | Random telegraphic signals in rapid thermal annealed silicon-silicon oxide system | |
dc.contributor.author | Chim, W.K. | |
dc.contributor.author | Choi, W.K. | |
dc.contributor.author | Leong, K.K. | |
dc.contributor.author | Teh, L.K. | |
dc.date.accessioned | 2014-06-17T06:53:39Z | |
dc.date.available | 2014-06-17T06:53:39Z | |
dc.date.issued | 2000-03-15 | |
dc.identifier.citation | Chim, W.K., Choi, W.K., Leong, K.K., Teh, L.K. (2000-03-15). Random telegraphic signals in rapid thermal annealed silicon-silicon oxide system. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 72 (2) : 135-137. ScholarBank@NUS Repository. | |
dc.identifier.issn | 09215107 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/62674 | |
dc.description.abstract | Random telegraphic signals (RTS) have been observed in large-area aluminium-silicon oxide-silicon capacitors, rapid thermal annealed (RTA) in argon at 600-700°C for 50 s. The noise spectra of these devices at higher biases showed a Lorenztian spectrum between 30-400 Hz. We suggested that the RTA process has produced weak spots in the devices. The filling and emptying process of a trap near the weak spot modulates the barrier height and resulted in the RTS and Lorentzian spectrum observed in these devices. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0921-5107(99)00487-0 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.sourcetitle | Materials Science and Engineering B: Solid-State Materials for Advanced Technology | |
dc.description.volume | 72 | |
dc.description.issue | 2 | |
dc.description.page | 135-137 | |
dc.description.coden | MSBTE | |
dc.identifier.isiut | 000086130900016 | |
Appears in Collections: | Staff Publications |
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