Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/62661
Title: Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron-beam-induced current
Authors: Lau, W.S. 
Chan, D.S.H. 
Phang, J.C.H. 
Chow, K.W.
Pey, K.S.
Lim, Y.P.
Sane, V. 
Cronquist, B.
Issue Date: 1995
Source: Lau, W.S., Chan, D.S.H., Phang, J.C.H., Chow, K.W., Pey, K.S., Lim, Y.P., Sane, V., Cronquist, B. (1995). Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron-beam-induced current. Journal of Applied Physics 77 (2) : 739-746. ScholarBank@NUS Repository.
Abstract: A new low-voltage contrast mechanism due to electron-hole pairs generated in the oxide by an electron beam was observed at electric fields lower than 3.5 MV/cm. This is in addition to the tunneling current microscopy (TCM) contrast mechanism observed at electric fields higher than 3.5 MV/cm. The new contrast mechanism is opposite in sign to the TCM contrast mechanism such that the image of a local thinning defect in the oxide is dark at low bias voltage and bright at higher bias voltage. Good contrast can be obtained at electric field as low as 2.4 MV/cm. Applications include large area imaging of oxide defects and quantitative mapping of small oxide thickness variations. © 1995 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/62661
ISSN: 00218979
Appears in Collections:Staff Publications

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