Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.358994
Title: Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron-beam-induced current
Authors: Lau, W.S. 
Chan, D.S.H. 
Phang, J.C.H. 
Chow, K.W.
Pey, K.S.
Lim, Y.P.
Sane, V. 
Cronquist, B.
Issue Date: 1995
Source: Lau, W.S., Chan, D.S.H., Phang, J.C.H., Chow, K.W., Pey, K.S., Lim, Y.P., Sane, V., Cronquist, B. (1995). Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron-beam-induced current. Journal of Applied Physics 77 (2) : 739-746. ScholarBank@NUS Repository. https://doi.org/10.1063/1.358994
Abstract: A new low-voltage contrast mechanism due to electron-hole pairs generated in the oxide by an electron beam was observed at electric fields lower than 3.5 MV/cm. This is in addition to the tunneling current microscopy (TCM) contrast mechanism observed at electric fields higher than 3.5 MV/cm. The new contrast mechanism is opposite in sign to the TCM contrast mechanism such that the image of a local thinning defect in the oxide is dark at low bias voltage and bright at higher bias voltage. Good contrast can be obtained at electric field as low as 2.4 MV/cm. Applications include large area imaging of oxide defects and quantitative mapping of small oxide thickness variations. © 1995 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/62661
ISSN: 00218979
DOI: 10.1063/1.358994
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

7
checked on Feb 21, 2018

WEB OF SCIENCETM
Citations

8
checked on Feb 21, 2018

Page view(s)

25
checked on Feb 18, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.