Please use this identifier to cite or link to this item: https://doi.org/10.1006/spmi.1994.1130
Title: Properties of monolithic integration of a resonant tunneling diode and a quantum well laser
Authors: Sheng, H. 
Chun, S.-J. 
Issue Date: Sep-1994
Source: Sheng, H., Chun, S.-J. (1994-09). Properties of monolithic integration of a resonant tunneling diode and a quantum well laser. Superlattices and Microstructures 16 (2) : 157-. ScholarBank@NUS Repository. https://doi.org/10.1006/spmi.1994.1130
Abstract: An investigation of the electrical and optical characteristics of a resonant tunneling diode monolithically integrated with a quantum well laser is carried out. An analytic expression for the propagating model current is given in terms of the total spontaneous emission rate. The laser is pumped by the current emitted by the resonant tunneling diode. When the current in the laser exceeds the threshold current, laser light is produced. Since the current in the laser exhibits negative differential resistance similar in behavior to the current of a resonant tunneling diode, a bistable light output can be obtained from this new device. © 1994 Academic Press. All rights reserved.
Source Title: Superlattices and Microstructures
URI: http://scholarbank.nus.edu.sg/handle/10635/62658
ISSN: 07496036
DOI: 10.1006/spmi.1994.1130
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