Please use this identifier to cite or link to this item: https://doi.org/10.1109/68.265900
Title: Polarization-insensitive electroabsorption in strained GaInAs/AlInAs quantum well structures
Authors: Wan, H.W.
Chong, T.C. 
Chua, S.J. 
Issue Date: Jan-1994
Source: Wan, H.W., Chong, T.C., Chua, S.J. (1994-01). Polarization-insensitive electroabsorption in strained GaInAs/AlInAs quantum well structures. IEEE Photonics Technology Letters 6 (1) : 92-94. ScholarBank@NUS Repository. https://doi.org/10.1109/68.265900
Abstract: The polarization-dependent electroabsorption in lattice-matched and strained GaInAs/AlInAs quantum well structures is studied using photocurrent spectral measurements. The results show that the application of a biaxial tensile strain by the appropriate selection of the Ga mole fraction and the well size reduces the difference between the transition energies of the heavy and light holes due to quantization, while a compressive strain further enhances the polarization dependence.
Source Title: IEEE Photonics Technology Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/62630
ISSN: 10411135
DOI: 10.1109/68.265900
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