Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/62554
Title: Optical spectroscopy study on carrier concentration and mobility in GaN
Authors: Li, Z.-F.
Lu, W.
Ye, H.-J.
Yuan, X.-Z.
Shen, X.-C.
Li, G.
Chua, S.J. 
Keywords: α-GaN epitaxy thin film
Carrier contration
IR reflection spectra
LO phonon-plasmon coupling mode
Mobility
Raman spectra
Issue Date: Aug-2000
Source: Li, Z.-F.,Lu, W.,Ye, H.-J.,Yuan, X.-Z.,Shen, X.-C.,Li, G.,Chua, S.J. (2000-08). Optical spectroscopy study on carrier concentration and mobility in GaN. Wuli Xuebao/Acta Physica Sinica 49 (8) : 1618-1619. ScholarBank@NUS Repository.
Abstract: We have studied the carrier concentration and the mobility in GaN expitaxial thin films deposited on sapphire substrate using infrared reflection spectroscopy. By theoretical calculation and fitting with the experimental IR reflection spectra for a series of Si-doped GaN epilayers and the sapphire substrate, we obtain the phonon vibrating parameters and plasmon frequency and damping constant in GaN. The carrier concentration and mobility have been deduced. The results show that the data for carrier concentration coincide with Hall measurement while the mobility is lower than Hall data by a factor of about 0. 5. The variation of the LO phonon-plasmon coupling mode with doping level has been clearly observed. Raman measurement has been performed on the same series of samples, showing that the behavior of the LO phonon-plasmon coupling mode is similar to that in IR measurement.
Source Title: Wuli Xuebao/Acta Physica Sinica
URI: http://scholarbank.nus.edu.sg/handle/10635/62554
ISSN: 10003290
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

27
checked on Dec 8, 2017

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.