Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.339104
Title: Observation of a high-resistance to a low-resistance transition in a silicon bicrystal
Authors: Ling, C.H. 
Issue Date: 1987
Source: Ling, C.H. (1987). Observation of a high-resistance to a low-resistance transition in a silicon bicrystal. Journal of Applied Physics 62 (10) : 4291-4293. ScholarBank@NUS Repository. https://doi.org/10.1063/1.339104
Abstract: The transition from a high-resistance to a low-resistance state has been observed in a silicon bicrystal. This phenomenon is attributed to the trapping of minority carriers at the grain-boundary interface states. In the low-resistance state, the dc resistance of different samples falls into a narrow range of values, and exhibits, in addition, a positive temperature coefficient.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/62509
ISSN: 00218979
DOI: 10.1063/1.339104
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