Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/62486
DC Field | Value | |
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dc.title | Noise characteristics of radio frequency sputtered amorphous silicon carbide films | |
dc.contributor.author | Choi, W.K. | |
dc.contributor.author | Han, L.J. | |
dc.contributor.author | Chua, L.G. | |
dc.date.accessioned | 2014-06-17T06:51:36Z | |
dc.date.available | 2014-06-17T06:51:36Z | |
dc.date.issued | 1998-11-01 | |
dc.identifier.citation | Choi, W.K.,Han, L.J.,Chua, L.G. (1998-11-01). Noise characteristics of radio frequency sputtered amorphous silicon carbide films. Journal of Applied Physics 84 (9) : 5057-5059. ScholarBank@NUS Repository. | |
dc.identifier.issn | 00218979 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/62486 | |
dc.description.abstract | Noise measurements of radio frequency sputtered hydrogenated (a-SiC:H) and unhydrogenated (a-SiC) amorphous silicon carbide films have been carried out. Two Lorenztian component were found in the noise spectra of the a-SiC:H and a-SiC films. Discrete traps, created by the sputtering process, were suggested to be responsible for the Lorenztian spectra observed. As only a relatively small amount of hydrogenation was achieved in our a-SiC:H films, passivation of the discrete traps was therefore not significant. This accounts for the Lorenztian spectra of the a-SiC:H films. We propose that furnace annealing has reduced the discrete traps substantially so that only the 1/f noise was observed in the annealed samples. © 1998 American Institute of Physics. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.sourcetitle | Journal of Applied Physics | |
dc.description.volume | 84 | |
dc.description.issue | 9 | |
dc.description.page | 5057-5059 | |
dc.description.coden | JAPIA | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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