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|Title:||Noise characteristics of radio frequency sputtered amorphous silicon carbide films|
|Authors:||Choi, W.K. |
|Citation:||Choi, W.K.,Han, L.J.,Chua, L.G. (1998-11-01). Noise characteristics of radio frequency sputtered amorphous silicon carbide films. Journal of Applied Physics 84 (9) : 5057-5059. ScholarBank@NUS Repository.|
|Abstract:||Noise measurements of radio frequency sputtered hydrogenated (a-SiC:H) and unhydrogenated (a-SiC) amorphous silicon carbide films have been carried out. Two Lorenztian component were found in the noise spectra of the a-SiC:H and a-SiC films. Discrete traps, created by the sputtering process, were suggested to be responsible for the Lorenztian spectra observed. As only a relatively small amount of hydrogenation was achieved in our a-SiC:H films, passivation of the discrete traps was therefore not significant. This accounts for the Lorenztian spectra of the a-SiC:H films. We propose that furnace annealing has reduced the discrete traps substantially so that only the 1/f noise was observed in the annealed samples. © 1998 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
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