Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/62478
Title: New hole negative differential resistance strained-layer device
Authors: Sheng, H. 
Chua, S.-J. 
Keywords: Gallium arsenide
Indium arsenide
Quantum well
Tunnelling
Issue Date: Dec-1995
Source: Sheng, H.,Chua, S.-J. (1995-12). New hole negative differential resistance strained-layer device. Materials Science and Engineering B 35 (1-3) : 87-89. ScholarBank@NUS Repository.
Abstract: A new negative differential resistance device making use of hole transport was developed and studied theoretically. The device consists of an InGaAs strained-layer quantum well, an AlGaAs barrier and a GaAs quantum well. The real space transfer phenomenon occurs in the GaAs and InGaAs quantum wells. For heterolayer transport, the distribution function which is calculated from the wavefunction of the hole can be used to describe the transport phenomena of the particles. The current of the device is controlled by the distribution function. The peak-to-valley current ratio is determined by the ratio of the effective masses of holes in the normal and strained quantum wells and the hole transmission coefficient. © 1995.
Source Title: Materials Science and Engineering B
URI: http://scholarbank.nus.edu.sg/handle/10635/62478
ISSN: 09215107
Appears in Collections:Staff Publications

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