Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/62473
Title: New developments in beam induced current methods for the failure analysis of VLSI circuits
Authors: Chan, D.S.H. 
Phang, J.C.H. 
Lau, W.S. 
Ong, V.K.S. 
Sane, V. 
Kolachina, S.
Osipowicz, T. 
Watt, F. 
Issue Date: Feb-1996
Source: Chan, D.S.H.,Phang, J.C.H.,Lau, W.S.,Ong, V.K.S.,Sane, V.,Kolachina, S.,Osipowicz, T.,Watt, F. (1996-02). New developments in beam induced current methods for the failure analysis of VLSI circuits. Microelectronic Engineering 31 (1-4) : 57-67. ScholarBank@NUS Repository.
Abstract: Several new developments using beam induced current methods for the failure analysis of VLSI circuits will be reviewed in this paper. These include the development of a single contact electron beam induced current method (SCEBIC) which facilitates the collection of EBIC signals from VLSI circuits using only a single contact to the substrate, a complementary technique using a proton beam to access the active regions through multi-level metal layers and Tunneling Current Microscopy (TCM) to distinguish oxide, substrate and oxide/substrate defects in very thin silicon dioxide films.
Source Title: Microelectronic Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/62473
ISSN: 01679317
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

23
checked on Dec 8, 2017

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.