Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/62462
Title: Neutral electron trap generation and hole trapping in thin oxides under electrostatic discharge stress
Authors: Chim, W.K. 
Teh, G.L.
Keywords: C-V measurement
Electron trap
Electrostatic discharge
Hole trap
MOS capacitor
Neutral electron trap
Oxide reliability
Thin oxide
Transmission line pulsing
Issue Date: Apr-1998
Source: Chim, W.K.,Teh, G.L. (1998-04). Neutral electron trap generation and hole trapping in thin oxides under electrostatic discharge stress. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 37 (4 SUPPL. A) : 1671-1673. ScholarBank@NUS Repository.
Abstract: Neutral electron trap generation and hole trapping under electrostatic discharge (ESD) stressing of thin oxides are investigated. The results show that the number of neutral electron traps generated by the ESD stress has an empirical power-law relation to the charge injected during ESD stress. Hole trapping is also shown to be linearly related to neutral electron trap generation, the slope of the straight line in a plot of the two quantities against each other being close to unity. This suggests that the hole traps and neutral electron traps originate from the same mechanism under ESD stress.
Source Title: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URI: http://scholarbank.nus.edu.sg/handle/10635/62462
ISSN: 00214922
Appears in Collections:Staff Publications

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