Please use this identifier to cite or link to this item:
|Title:||Negative bias temperature instability on plasma-nitrided silicon dioxide film|
|Source:||Ang, C.-H.,Lek, C.-M.,Tan, S.-S.,Cho, B.-J.,Chen, T.,Lin, W.,Zhen, J.-G. (2002-03-15). Negative bias temperature instability on plasma-nitrided silicon dioxide film. Japanese Journal of Applied Physics, Part 2: Letters 41 (3 B) : L314-L316. ScholarBank@NUS Repository.|
|Abstract:||The behavior of negative-bias-temperature-instability (NBTI) on ultra-thin plasma-nitrided silicon dioxide films (1.8 and 2.6 nm) has been investigated and compared with conventional thermal nitridation. Plasma-nitrided oxides shows more resistance to NBTI, as compared to thermal-nitrided oxides. This is attributed to the fact that plasma nitridation incorporates the nitrogen at the top oxide surface, thus mitigating the undesirable nitrogen-enhanced NBTI effect. Additionally, the degradation mechanism of NBTI is found to be insensitive to the nitridation process, nitrogen concentration and boron penetration.|
|Source Title:||Japanese Journal of Applied Physics, Part 2: Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 8, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.