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|Title:||Modelling of a resonant tunnelling hot electron transistor|
|Authors:||Sheng, H. |
|Citation:||Sheng, H., Chua, S.-J. (1993). Modelling of a resonant tunnelling hot electron transistor. Semiconductor Science and Technology 8 (8) : 1590-1595. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/8/8/017|
|Abstract:||A semiclassical model of a resonant tunnelling hot electron transistor (RHET) is proposed. The model includes quantum interference and multiple scattering by means of a correlation function and mean free path. The DC properties of a RHET are calculated and analysed. The results show that the maximum common-emitter current gain of a RHET can be achieved by modulating the base width and barrier height of the emitter resonant tunnelling structure.|
|Source Title:||Semiconductor Science and Technology|
|Appears in Collections:||Staff Publications|
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