Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/8/8/017
Title: Modelling of a resonant tunnelling hot electron transistor
Authors: Sheng, H. 
Chua, S.-J. 
Issue Date: 1993
Citation: Sheng, H., Chua, S.-J. (1993). Modelling of a resonant tunnelling hot electron transistor. Semiconductor Science and Technology 8 (8) : 1590-1595. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/8/8/017
Abstract: A semiclassical model of a resonant tunnelling hot electron transistor (RHET) is proposed. The model includes quantum interference and multiple scattering by means of a correlation function and mean free path. The DC properties of a RHET are calculated and analysed. The results show that the maximum common-emitter current gain of a RHET can be achieved by modulating the base width and barrier height of the emitter resonant tunnelling structure.
Source Title: Semiconductor Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/62430
ISSN: 02681242
DOI: 10.1088/0268-1242/8/8/017
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