Please use this identifier to cite or link to this item: https://doi.org/10.1109/55.720187
Title: Low-frequency noise characterizattion of latent damage in thin oxides subjected to high-field impulse stressing
Authors: Chim, W.K. 
Yeo, B.P.
Lim, P.S.
Chan, D.S.H. 
Issue Date: Oct-1998
Source: Chim, W.K., Yeo, B.P., Lim, P.S., Chan, D.S.H. (1998-10). Low-frequency noise characterizattion of latent damage in thin oxides subjected to high-field impulse stressing. IEEE Electron Device Letters 19 (10) : 363-366. ScholarBank@NUS Repository. https://doi.org/10.1109/55.720187
Abstract: Latent damage in thin oxides, caused by high-field impulse stressing, can lead to increased trap generation in the device during the subsequent hot-carrier stressing. Monitoring of such damage is typically carried out detecting the change in an appropriate electrical parameter of the device or by extracting the generated interface states and trapped charges. It was found that low-frequency noise measurements could provide a more sensitive alternative for characterizing the electrostatic discharge stress-induced latent damage in thin oxides.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/62394
ISSN: 07413106
DOI: 10.1109/55.720187
Appears in Collections:Staff Publications

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