Please use this identifier to cite or link to this item: https://doi.org/9/003
Title: Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements
Authors: Chan, D.S.H. 
Leang, S.E.
Chim, W.K. 
Issue Date: Sep-1998
Source: Chan, D.S.H.,Leang, S.E.,Chim, W.K. (1998-09). Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements. Semiconductor Science and Technology 13 (9) : 976-980. ScholarBank@NUS Repository. https://doi.org/9/003
Abstract: The roles of hot electrons and hot holes in the generation of interface states in MOSFETs have been a controversial issue, due to the different interpretations of experimental data. In this article, a new physics-based charge-extraction algorithm, based on charge-pumping measurements, is used to investigate the roles of electrons and holes in the generation of interface states in submicrometre p-channel and n-channel MOSFETs. Our results show that while hot holes play an important role in the creation of interface states in submicrometre nMOSFETs, hot electrons are the main contributors to the interface-state generation in submicrometre buried-channel pMOSFETs. Therefore different analysis is required when characterizing the hot-carrier behaviour of pMOSFETs and nMOSFETs.
Source Title: Semiconductor Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/62357
ISSN: 02681242
DOI: 9/003
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