Please use this identifier to cite or link to this item: https://doi.org/10.1109/55.644078
Title: Investigation of interface traps in LDD pMOST's by the DCIV method
Authors: Jie, B.B.
Li, M.F. 
Lou, C.L.
Chim, W.K. 
Chan, D.S.H. 
Lo, K.F.
Issue Date: Dec-1997
Source: Jie, B.B., Li, M.F., Lou, C.L., Chim, W.K., Chan, D.S.H., Lo, K.F. (1997-12). Investigation of interface traps in LDD pMOST's by the DCIV method. IEEE Electron Device Letters 18 (12) : 583-585. ScholarBank@NUS Repository. https://doi.org/10.1109/55.644078
Abstract: Interface traps in submicron buried-channel LDD pMOST's, generated under different stress conditions, are investigated by the direct-current current-voltage (DCIV) technique. Two peaks C and D in the DCIV spectrum are found corresponding to interface traps generated in the channel region and in the LDD region respectively. The new DCIV results clarify certain issues of the underlying mechanisms involved on hot-carrier degradation in LDD pMOST's. Under channel hot-carrier stress conditions, the hot electron injection and electron trapping in the oxide occurs for all stressing gate voltage. However, the electron injection induced interface trap spatial location changes from the LDD region to the channel region when the stressing gate voltage changes from low to high.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/62356
ISSN: 07413106
DOI: 10.1109/55.644078
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