Please use this identifier to cite or link to this item: https://doi.org/8/018
Title: Interface roughness effects on the currents of resonant tunnelling hot electron transistor
Authors: Sheng, Hanyu 
Chua, Soo-Jin 
Issue Date: 1994
Source: Sheng, Hanyu,Chua, Soo-Jin (1994). Interface roughness effects on the currents of resonant tunnelling hot electron transistor. Journal of Physics D: Applied Physics 27 (8) : 1703-1706. ScholarBank@NUS Repository. https://doi.org/8/018
Abstract: The effects of interface roughness on the resonant tunnelling hot electron transistor current are studied by calculating an average effective transmission coefficient for the quantum well structure. Our model for the transmission coefficient includes both quantum interference and bulk scattering. The interface roughness is represented by a rectangular distribution having the width of one atomic layer. The results indicate that the interface roughness will lower and broaden the resonant peak. The emitter peak tunnelling current, base current and collector current will be reduced by 50% at room temperature. The effect of interface roughness on the gain is relatively weak.
Source Title: Journal of Physics D: Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/62346
ISSN: 00223727
DOI: 8/018
Appears in Collections:Staff Publications

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