Please use this identifier to cite or link to this item: https://doi.org/10.1002/(SICI)1096-9918(199908)28:1<166
Title: Infrared reflectance studies of GaN epitaxial films on sapphire substrate
Authors: Feng, Z.C.
Hou, Y.T. 
Chua, S.J. 
Li, M.F. 
Issue Date: 1999
Source: Feng, Z.C.,Hou, Y.T.,Chua, S.J.,Li, M.F. (1999). Infrared reflectance studies of GaN epitaxial films on sapphire substrate. Surface and Interface Analysis 28 (1) : 166-169. ScholarBank@NUS Repository. https://doi.org/10.1002/(SICI)1096-9918(199908)28:1<166
Abstract: Infrared reflectivity measurements were performed on undoped and Si-doped GaN films grown on sapphire. After analyzing the substrate reflectance accurately, a good fit to the measured reflectance has been achieved. By comparison of the measured and calculated spectra, it becomes possible to identify GaN phonons from the overlapped complicated substrate bands, and also to determine the carrier concentration even for GaN on sapphire with low and medium doping levels. In some samples, an interface layer has been demonstrated to be formed between film and substrate, which manifests itself as a damping behaviour of the interference fringes in the spectra. Detailed analysis suggests that this interface layer, with a thickness of approximately 0.14 μm estimated from a two-layer model simulation, may be due to the high density of defects caused by stress relaxation.
Source Title: Surface and Interface Analysis
URI: http://scholarbank.nus.edu.sg/handle/10635/62335
ISSN: 01422421
DOI: 10.1002/(SICI)1096-9918(199908)28:1<166
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