Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1368162
Title: Infrared reflectance of GaN films grown on Si(001) substrates
Authors: Zhang, X. 
Hou, Y.-T. 
Feng, Z.-C.
Chen, J.-L.
Issue Date: Jun-2001
Source: Zhang, X.,Hou, Y.-T.,Feng, Z.-C.,Chen, J.-L. (2001-06). Infrared reflectance of GaN films grown on Si(001) substrates. Journal of Applied Physics 89 (11 I) : 6165-6170. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1368162
Abstract: GaN thin films on Si(001) substrates are studied by infrared reflectance (IRR) spectroscopy at room temperature (RT). Variations in the IRR spectral line shape with the microstructure of GaN/Si(011) film are quantitatively explained in terms of a three-component effective medium model. In this model, the nominally undoped GaN film is considered to consist of three elementary components, i.e., single crystalline GaN grains, pores (voids), and inter-granulated materials (amorphous GaN clusters). Such a polycrystalline nature of the GaN/Si(001) films was confirmed by scanning electron microscopy measurements. It was demonstrated that based on the proposed three-component effective medium model, excellent overall simulation of the RT-IRR spectra can be achieved, and the fine structures of the GaN reststrahlen band in the measured RT-IRR spectra can also be interpreted very well. Furthermore, the volume fraction for each component in the GaN/Si(001) film was accurately determined by fitting the experimental RT-IRR spectra with the theoretical simulation. These results indicate that IRR spectroscopy can offer a sensitive and convenient tool to probe the microstructure of GaN films grown on silicon. © 2001 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/62334
ISSN: 00218979
DOI: 10.1063/1.1368162
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