Please use this identifier to cite or link to this item:
|Title:||Influence of Si doping on the infrared reflectance characteristics of GaN grown on sapphire|
|Authors:||Hou, Y.T. |
|Source:||Hou, Y.T.,Feng, Z.C.,Chua, S.J.,Li, M.F.,Akutsu, N.,Matsumoto, K. (1999-11-15). Influence of Si doping on the infrared reflectance characteristics of GaN grown on sapphire. Applied Physics Letters 75 (20) : 3117-3119. ScholarBank@NUS Repository.|
|Abstract:||Si-doped GaN films grown on sapphire are investigated by infrared reflectance. A damping behavior of the interference fringes is observed, and interpreted to be due to the presence of an interface layer between the film and the substrate. A theoretical calculation using a two-layer model to take into account the interface layer resulted in this damping in agreement with the experiment. The damping behavior and an improvement of interface properties by Si incorporation are demonstrated. © 1999 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 8, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.