Improved crystalline quality of molecular beam epitaxy grown GaAs-on-Si epilayer through the use of low-temperature GaAs intermediate layer

Abstract

Improvements in crystalline quality of GaAs epilayers on Si have been achieved through the use of low-temperature (LT) GaAs intermediate layer grown at 230°C. The use of this LT-GaAs intermediate layer between the GaAs nucleation layer and the GaAs overlayer has improved the photoluminescence (PL) peak intensity by about five times, and reduced the GaAs (004) X-ray diffraction full width at half maximum (FWHM) by 59 arcsecs. The PL results were subsequently confirmed by cathodoluminescence images.