Please use this identifier to cite or link to this item:
https://doi.org/10.1002/(SICI)1098-2760(20000305)24:5<311
DC Field | Value | |
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dc.title | Improved Chalmers model for a GaAs MESFET | |
dc.contributor.author | Xiao, Q. | |
dc.contributor.author | Ooi, B.L. | |
dc.contributor.author | Ma, J. | |
dc.date.accessioned | 2014-06-17T06:49:39Z | |
dc.date.available | 2014-06-17T06:49:39Z | |
dc.date.issued | 2000-03-05 | |
dc.identifier.citation | Xiao, Q.,Ooi, B.L.,Ma, J. (2000-03-05). Improved Chalmers model for a GaAs MESFET. Microwave and Optical Technology Letters 24 (5) : 311-316. ScholarBank@NUS Repository. <a href="https://doi.org/10.1002/(SICI)1098-2760(20000305)24:5<311" target="_blank">https://doi.org/10.1002/(SICI)1098-2760(20000305)24:5<311</a> | |
dc.identifier.issn | 08952477 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/62309 | |
dc.description.abstract | An improved Chalmers large-signal model for a GaAs MESFET transistor is proposed. A commercially packaged high-power MESFET transistor (Fujitsu FLC103WG) is adopted for the extraction. Both hot and cold condition measurements and a pulsed I/V measurement are performed to derive the model. For the verification of the model, a simple single-stage class-AB amplifier is subsequently built. The simulation and measurement results of the intermodulation distortion of this amplifier agree excellently. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/(SICI)1098-2760(20000305)24:5<311 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.doi | 10.1002/(SICI)1098-2760(20000305)24:5<311 | |
dc.description.sourcetitle | Microwave and Optical Technology Letters | |
dc.description.volume | 24 | |
dc.description.issue | 5 | |
dc.description.page | 311-316 | |
dc.description.coden | MOTLE | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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