Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/62291
Title: Hot-carrier reliability of non-degenerately doped tungsten polycide gate buried-channel p-MOSFETs
Authors: Lou, C.L.
Chim, W.K. 
Chan, D.S.H. 
Pan, Y.
Issue Date: Aug-1997
Source: Lou, C.L.,Chim, W.K.,Chan, D.S.H.,Pan, Y. (1997-08). Hot-carrier reliability of non-degenerately doped tungsten polycide gate buried-channel p-MOSFETs. Solid-State Electronics 41 (8) : 1171-1176. ScholarBank@NUS Repository.
Abstract: A polysilicon-depletion effect is observed for the non-degenerately doped polysilicon layer of a tungsten silicide-polysilicon gate stack of buried-channel p-MOSFETs, but not for n-MOSFETs with a polysilicon layer of the same doping concentration. A lower current drive and transconductance, coupled with a higher subthreshold slope, will result in poorer dynamic performance for p-MOSFETs having a lower doped polysilicon layer. The potential drop across the lower doped polysilicon layer results in lower gate currents. Consequently the p-MOSFETs with a lower doped polysilicon layer are more resistant to hot-carrier induced degradation and have higher hot-carrier lifetimes. Thus there exists an optimum polysilicon doping concentration for tungsten-polycide devices and the latter is dependent on the desired electrical performance and hot-carrier reliability of buried-channel p-MOSFETs. © 1997 Elsevier Science Ltd.
Source Title: Solid-State Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/62291
ISSN: 00381101
Appears in Collections:Staff Publications

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