Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/62177
DC Field | Value | |
---|---|---|
dc.title | Fabrication of ZnSe/ZnS quantum wires using high index GaP substrates | |
dc.contributor.author | Tomasini, P. | |
dc.contributor.author | Arai, K. | |
dc.contributor.author | Wu, Y.H. | |
dc.contributor.author | Yao, T. | |
dc.date.accessioned | 2014-06-17T06:48:13Z | |
dc.date.available | 2014-06-17T06:48:13Z | |
dc.date.issued | 1996-12-01 | |
dc.identifier.citation | Tomasini, P.,Arai, K.,Wu, Y.H.,Yao, T. (1996-12-01). Fabrication of ZnSe/ZnS quantum wires using high index GaP substrates. Journal of Applied Physics 80 (11) : 6539-6543. ScholarBank@NUS Repository. | |
dc.identifier.issn | 00218979 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/62177 | |
dc.description.abstract | ZnSe/ZnS quantum wires and quantum dots were grown on unpatterned substrates by molecular beam epitaxy. Several substrate orientations were compared. These structures exhibited a strong luminescence. A linear crystallographic dependence of the photoluminescence peak energy was observed when comparing structures grown in the same experimental conditions. All samples exhibited also strong zero-dimensional-one-dimensional confinement signatures. An empirical analysis is provided illuminating the issue involved by the redshift. © 1996 American Institute of Physics. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.sourcetitle | Journal of Applied Physics | |
dc.description.volume | 80 | |
dc.description.issue | 11 | |
dc.description.page | 6539-6543 | |
dc.description.coden | JAPIA | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
Show simple item record
Files in This Item:
There are no files associated with this item.
Google ScholarTM
Check
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.