Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/62138
Title: Enhanced optical emission from GaN films grown on a silicon substrate
Authors: Zhang, X. 
Chua, S.-J. 
Li, P.
Chong, K.-B. 
Feng, Z.-C. 
Issue Date: 5-Apr-1999
Source: Zhang, X.,Chua, S.-J.,Li, P.,Chong, K.-B.,Feng, Z.-C. (1999-04-05). Enhanced optical emission from GaN films grown on a silicon substrate. Applied Physics Letters 74 (14) : 1984-1986. ScholarBank@NUS Repository.
Abstract: GaN films were grown on a silicon wafer by metallorganic chemical vapor deposition. The substrate was composed of composite intermediate layers of ultrathin amorphous silicon films and a GaN/AlGaN multilayered buffer. The enhanced optical emission characteristics and crystallinity of the samples were determined by photoluminescence and X-ray diffraction spectroscopy.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/62138
ISSN: 00036951
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

24
checked on Dec 8, 2017

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.