Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/62128
DC FieldValue
dc.titleElectron and hole quasi-fermi levels in the vicinity of a grain boundary under uniform illumination: An approximate method of computation
dc.contributor.authorLing, C.H.
dc.contributor.authorKwok, C.Y.
dc.date.accessioned2014-06-17T06:47:42Z
dc.date.available2014-06-17T06:47:42Z
dc.date.issued1985-07
dc.identifier.citationLing, C.H.,Kwok, C.Y. (1985-07). Electron and hole quasi-fermi levels in the vicinity of a grain boundary under uniform illumination: An approximate method of computation. Solid State Electronics 28 (7) : 653-658. ScholarBank@NUS Repository.
dc.identifier.issn00381101
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62128
dc.description.abstractAn approximate method for the computation of quasi-Fermi levels under various illumination and zero bias is presented. The theory is based on two approximations: an abrupt depletion space charge region surrounding the grain boundary, and a parabolic variation, assumed to be small, of the majority quasi-Fermi level. Results indicate the approximations in our analysis are valid at low illumination. © 1985.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleSolid State Electronics
dc.description.volume28
dc.description.issue7
dc.description.page653-658
dc.description.codenSSELA
dc.identifier.isiutNOT_IN_WOS
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