Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/62128
Title: Electron and hole quasi-fermi levels in the vicinity of a grain boundary under uniform illumination: An approximate method of computation
Authors: Ling, C.H. 
Kwok, C.Y.
Issue Date: Jul-1985
Source: Ling, C.H.,Kwok, C.Y. (1985-07). Electron and hole quasi-fermi levels in the vicinity of a grain boundary under uniform illumination: An approximate method of computation. Solid State Electronics 28 (7) : 653-658. ScholarBank@NUS Repository.
Abstract: An approximate method for the computation of quasi-Fermi levels under various illumination and zero bias is presented. The theory is based on two approximations: an abrupt depletion space charge region surrounding the grain boundary, and a parabolic variation, assumed to be small, of the majority quasi-Fermi level. Results indicate the approximations in our analysis are valid at low illumination. © 1985.
Source Title: Solid State Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/62128
ISSN: 00381101
Appears in Collections:Staff Publications

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