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|Title:||Electron and hole quasi-fermi levels in the vicinity of a grain boundary under uniform illumination: An approximate method of computation|
|Authors:||Ling, C.H. |
|Source:||Ling, C.H.,Kwok, C.Y. (1985-07). Electron and hole quasi-fermi levels in the vicinity of a grain boundary under uniform illumination: An approximate method of computation. Solid State Electronics 28 (7) : 653-658. ScholarBank@NUS Repository.|
|Abstract:||An approximate method for the computation of quasi-Fermi levels under various illumination and zero bias is presented. The theory is based on two approximations: an abrupt depletion space charge region surrounding the grain boundary, and a parabolic variation, assumed to be small, of the majority quasi-Fermi level. Results indicate the approximations in our analysis are valid at low illumination. © 1985.|
|Source Title:||Solid State Electronics|
|Appears in Collections:||Staff Publications|
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