Please use this identifier to cite or link to this item: https://doi.org/10.1109/68.883813
Title: Dual-Wavelength Laser Source Monolithically Integrated with Y-Junction Coupler and Isolator Using Quantum-Well Intermixing
Authors: Teng, J.H.
Chua, S.J. 
Zhang, Z.H.
Huang, Y.H.
Li, G.
Wang, Z.J.
Keywords: Impurity-free vacancy disordering
Quantum-well intermixing
Quantum-well lasers
Ridge waveguide
Semiconductor lasers
Y-junction coupler
Issue Date: Oct-2000
Citation: Teng, J.H., Chua, S.J., Zhang, Z.H., Huang, Y.H., Li, G., Wang, Z.J. (2000-10). Dual-Wavelength Laser Source Monolithically Integrated with Y-Junction Coupler and Isolator Using Quantum-Well Intermixing. IEEE Photonics Technology Letters 12 (10) : 1310-1312. ScholarBank@NUS Repository. https://doi.org/10.1109/68.883813
Abstract: A dual-wavelength laser source monolithically integrated with an isolator and a Y-junction coupler is fabricated by using a new quantum-well intermixing technique. The technique employs a buried Ge layer between the sample surface and the spin-on silica film to control the bandgap tuning in selective areas across a wafer. The integrated isolator can avoid the crosstalk between the two channels of the device. Two distinct lasing wavelengths of 950 and 969 nm are coupled into one single output port through the transparent Y-junction coupler. The two channels have similar threshold current and slope efficiency.
Source Title: IEEE Photonics Technology Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/62071
ISSN: 10411135
DOI: 10.1109/68.883813
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