Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/62028
Title: Determination of minority carrier diffusion lengths in semiconductor wafers with non-uniform carrier lifetimes by the surface photovoltage technique
Authors: Tan, L.S. 
Huynh, F.N.L.
Issue Date: 1999
Source: Tan, L.S.,Huynh, F.N.L. (1999). Determination of minority carrier diffusion lengths in semiconductor wafers with non-uniform carrier lifetimes by the surface photovoltage technique. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD : 318-321. ScholarBank@NUS Repository.
Abstract: An analytical theory of the surface photovoltage method for the determination of the minority carrier diffusion lengths in semiconductor wafers with non-uniform carrier lifetimes is presented. Values of minority carrier diffusion lengths extracted using the theory agree well with those from full numerical simulations. Experimental verification of the theory is currently in progress.
Source Title: Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
URI: http://scholarbank.nus.edu.sg/handle/10635/62028
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