Please use this identifier to cite or link to this item: https://doi.org/10.1109/16.701496
Title: Design of integrated current sensor for lateral IGBT power devices
Authors: Liang, Y.C. 
Samudra, G.S. 
Hor, V.S.S.
Keywords: Device simulations
Integrated current sensor
LIGBT
Issue Date: 1998
Citation: Liang, Y.C., Samudra, G.S., Hor, V.S.S. (1998). Design of integrated current sensor for lateral IGBT power devices. IEEE Transactions on Electron Devices 45 (7) : 1614-1616. ScholarBank@NUS Repository. https://doi.org/10.1109/16.701496
Abstract: The integration of current sensor in power devices is generally an important feature when the devices undergoing design are to be used for advanced power electronic applications. This brief, for the first time, proposes a design of integrated current sensor for lateral insulatedgate bipolar transistor (LIGBT) power devices. The sensor is able to provide a constant lateral current sensing ratio over the wide variations of operating current density and gate voltage. A small variation in the sensing ratio was also achieved over normal operating temperature range of 250-450 K. ©1998 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/62015
ISSN: 00189383
DOI: 10.1109/16.701496
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